? semiconductor components industries, llc, 1996 october, 2016 ? rev. 11 1 publication order number: MGSF1N03Lt1/d MGSF1N03L, mvgsf1n03l power mosfet 30 v, 2.1 a, single n ? channel, sot ? 23 these miniature surface mount mosfets low r ds(on) assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. typical applications are dc ? dc converters and power management in portable and battery ? powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life ? miniature sot ? 23 surface mount package saves board space ? mv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant maximum ratings (t j = 25 c unless otherwise noted) parameter symbol value unit drain ? to ? source voltage v dss 30 v gate ? to ? source voltage v gs 20 v continuous drain current r jl steady state t a = 25 c i d 2.1 a t a = 85 c 1.5 power dissipation r jl steady state t a = 25 c p d 0.69 w continuous drain current (note 1) steady state t a = 25 c i d 1.6 a t a = 85 c 1.2 power dissipation (note 1) t a = 25 c p d 0.42 w pulsed drain current t p =10 s i dm 6.0 a esd capability (note 3) c = 100 pf, rs = 1500 esd 125 v operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 2.1 a lead temperature for soldering purposes (1/8? from case for 10 sec) t l 260 c thermal resistance ratings parameter symbol max unit junction ? to ? foot ? steady state r jl 180 c/w junction ? to ? ambient ? steady state (note 1) r ja 300 junction ? to ? ambient ? t < 10 s (note 1) r ja 250 junction ? to ? ambient ? steady state (note 2) r ja 400 stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. surface ? mounted on fr4 board using 650 mm 2 , 1 oz. cu pad size. 2. surface ? mounted on fr4 board using 50 mm 2 , 1 oz. cu pad size. 3. esd rating information: hbm class 0. g d s device package shipping ? ordering information 30 v 125 m @ 4.5 v 80 m @ 10 v r ds(on) typ 2.1 a i d max v (br)dss sot ? 23 case 318 style 21 marking diagram/ pin assignment n3 = specific device code m = date code* = pb ? free package 3 1 drain 1 gate 2 source n ? channel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. MGSF1N03Lt3g sot ? 23 (pb ? free) n3 m (note: microdot may be in either location) *date code orientation and/or overbar may vary depending upon manufacturing location. MGSF1N03Lt1g sot ? 23 pb ? free 3000 / tape & reel 10000 / tape & reel mvgsf1n03lt1g sot ? 23 (pb ? free) 3000 / tape & reel www.onsemi.com
MGSF1N03L, mvgsf1n03l www.onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain ? to ? source breakdown voltage (v gs = 0 vdc, i d = 10 adc) v (br)dss 30 ? ? vdc zero gate voltage drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 30 vdc, v gs = 0 vdc, t j = 125 c) i dss ? ? ? ? 1.0 10 adc gate ? body leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss ? ? 100 nadc on characteristics (note 4) gate threshold voltage (v ds = v gs , i d = 250 adc) v gs(th) 1.0 1.7 2.4 vdc static drain ? to ? source on ? resistance (v gs = 10 vdc, i d = 1.2 adc) (v gs = 4.5 vdc, i d = 1.0 adc) r ds(on) ? ? 0.08 0.125 0.10 0.145 dynamic characteristics input capacitance (v ds = 5.0 vdc) c iss ? 140 ? pf output capacitance (v ds = 5.0 vdc) c oss ? 100 ? transfer capacitance (v dg = 5.0 vdc) c rss ? 40 ? switching characteristics (note 5) turn ? on delay time (v dd = 15 vdc, i d = 1.0 adc, r l = 50 ) t d(on) ? 2.5 ? ns rise time t r ? 1.0 ? turn ? off delay time t d(off) ? 16 ? fall time t f ? 8.0 ? gate charge (see figure 6) q t ? 6000 ? pc source ? drain diode characteristics continuous current i s ? ? 0.6 a pulsed current i sm ? ? 0.75 forward voltage (note 5) v sd ? 0.8 ? v product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 4. pulse test: pulse width 300 s, duty cycle 2%. 5. switching characteristics are independent of operating junction temperature.
MGSF1N03L, mvgsf1n03l www.onsemi.com 3 typical electrical characteristics figure 1. transfer characteristics figure 2. on ? region characteristics 0 1.5 2 0.5 1 1 1.5 2 2.5 3 i d , drain current (amps) v gs , gate-to-source voltage (volts) v ds = 10 v t j = 150 c 25 c -55 c 3.5 2.5 024 10 0 1.5 2 v ds , drain-to-source voltage (volts) i d , drain current (amps) 6 0.5 8 1 2.5 3.25 v 2.75 v v gs = 3.75 v 2.5 v 3.0 v 3.5 v typical electrical characteristics figure 3. on ? resistance versus drain current figure 4. on ? resistance versus drain current r ds(on) , drain-to-source resistance (ohms) 0 0.2 0.4 0.6 0.8 0.04 0.14 i d , drain current (amps) 25 c v gs = 4.5 v 0.09 0.1 0.3 0.5 0.7 150 c -55 c 0.9 1 0.24 0.19 r ds(on) , drain-to-source resistance (ohms) 0 0.4 0.8 1.2 1.6 0.04 0.1 0.12 i d , drain current (amps) v gs = 10 v 0.08 0.06 0.14 0.2 0.6 1 1.4 1.8 2 25 c 150 c -55 c 0.16
MGSF1N03L, mvgsf1n03l www.onsemi.com 4 typical electrical characteristics figure 5. on ? resistance variation with temperature 0.001 0.1 1 figure 6. gate charge v sd , diode forward voltage (volts) figure 7. body diode forward voltage i d , diode current (amps) 0 0.1 0.2 0.3 0.9 0.01 0.4 figure 8. capacitance v ds , drain-to-source voltage (volts) c, capacitance (pf) 0 8 16 20 412 c iss c oss c rss 350 50 v gs = 0 v f = 1 mhz t j = 25 c 0 0.5 0.6 0.7 0.8 r ds(on) , drain-to-source resistance (normalized) 0 0.8 t j , junction temperature ( c) v gs = 10 v i d = 2 a -55 0 50 100 150 0.2 0.4 0.6 1 1.2 1.4 1.6 v gs = 4.5 v i d = 1 a v gs , gate-to-source voltage (volts) 0 10 6 2 0 q t , total gate charge (pc) 8 4 1000 6000 v ds = 24 v t j = 25 c 2000 i d = 2.0 a 3000 5000 4000 t j = 150 c -55 c 25 c 1.8 -25 25 75 125 100 150 200 250 300
MGSF1N03L, mvgsf1n03l www.onsemi.com 5 typical electrical characteristics figure 9. maximum rated forward biased safe operating area v ds , drain ? to ? source voltage (v) 100 10 1 0.1 0.01 0.1 1 10 i d , drain current (a) 10 s 100 s 1 ms 10 ms dc 0 v < v gs < 10 v single pulse t j = 150 c, t c = 25 c r ds(on) limit thermal limit package limit 1000 0.1 1 10 100 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 100 0 0.1 0.2 0.02 d = 0.5 0.05 0.01 single pulse transient thermal response ? r ja ( c/w) t, time (s) figure 10. thermal response 1 ms
MGSF1N03L, mvgsf1n03l www.onsemi.com 6 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ar d a1 3 1 2 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish. minimum lead thickness is the minimum thickness of the base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs. soldering footprint* view c l 0.25 l1 e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.000 b 0.37 0.44 0.50 0.015 c 0.08 0.14 0.20 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.30 0.43 0.55 0.012 0.039 0.044 0.002 0.004 0.017 0.020 0.006 0.008 0.114 0.120 0.051 0.055 0.075 0.080 0.017 0.022 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.027 c 0 ??? 10 0 ??? 10 t t 3x top view side view end view 2.90 0.80 dimensions: millimeters 0.90 pitch 3x 3x 0.95 recommended style 21: pin 1. gate 2. source 3. drain *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 MGSF1N03Lt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ?
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